研究目的
Investigating the formation of magnesium silicides on amorphous silicon by deposition of Mg at room temperature, including the study of optimal crystal structures under high pressure, phase transitions, and the role of compression stress in the phase formation sequence.
研究成果
The study concludes that the formation of magnesium silicides on amorphous silicon at room temperature is influenced by compression stresses within the Mg-Si mixture, leading to the initial formation of the orthorhombic phase o-Mg2Si followed by the cubic phase c-Mg2Si. The DRS method is effective for real-time monitoring of phase formation and transformations. The findings have implications for the development of infrared photodetectors and thermoelectric materials.
研究不足
The study is limited by the complexity and cost of high-pressure experiments, the potential for oxidation of samples when exposed to the atmosphere, and the challenges in accurately measuring internal stresses within the films.
1：Experimental Design and Method Selection:
The study combines ab initio DFT calculations with experimental techniques including electron energy loss spectroscopy, differential reflectance spectroscopy, and high resolution transmission electron microscopy to investigate the formation of magnesium silicides on amorphous silicon.
2：Sample Selection and Data Sources:
Samples were prepared by depositing Mg onto prefabricated amorphous Si layers on Si(111) surfaces under ultrahigh vacuum conditions.
3：List of Experimental Equipment and Materials:
Equipment includes a Varian UHV chamber, a Mg evaporator, a PHI 15-255G Auger electron spectrometer, a custom-made Differential Reflectance Spectrometer, and a JEOL JEM4000EX HRTEM apparatus.
4：Experimental Procedures and Operational Workflow:
Mg was deposited at room temperature onto a-Si layers, with in situ monitoring of optical reflectance spectra and post-deposition analysis by EELS and HRTEM.
5：Data Analysis Methods:
Data analysis involved comparing experimental spectra with theoretical predictions from DFT calculations to identify phases and monitor phase transformations.
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