研究目的
Investigating the properties of monolayer and bilayer transition-metal dichalcogenides grown by molecular-beam epitaxy using scanning tunneling microscopy and spectroscopy.
研究成果
The study reveals interesting phenomena and properties of epitaxial TMD films, including intrinsic properties and effects induced by defects. It highlights the importance of STM/S in understanding the electronic and structural properties of 2D materials and suggests directions for future research.
研究不足
The study is limited by the resolution of STM/S techniques and the quality of MBE-grown TMD films. Potential areas for optimization include improving film quality and developing more sophisticated data analysis methods.
1：Experimental Design and Method Selection:
The study employs scanning tunneling microscopy and spectroscopy (STM/S) to investigate the properties of TMD films.
2：Sample Selection and Data Sources:
Monolayer and bilayer TMD films grown by molecular-beam epitaxy (MBE) on substrates like HOPG and graphene/SiC.
3：List of Experimental Equipment and Materials:
STM/S equipment, MBE growth chamber, HOPG and graphene/SiC substrates.
4：Experimental Procedures and Operational Workflow:
Growth of TMD films by MBE followed by in situ STM/S characterization to study intrinsic and extrinsic properties.
5：Data Analysis Methods:
Analysis of STM images and STS spectra to determine electronic properties, defect characteristics, and their effects.
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