研究目的
Investigating the impact of memristors on the performance of a CMOS-memristive fully differential transimpedance amplifier for IoT applications.
研究成果
The study demonstrates that memristor-based designs offer advantages in terms of reduced power dissipation and on-chip area, with improved performance in certain aspects such as gain variation with temperature and total harmonic distortion. However, the bandwidth decreases when memristors are introduced. The findings suggest that memristor-based designs are promising for IoT applications where power and area efficiency are critical.
研究不足
The study is limited to simulation results using 180nm CMOS technology and HP memristor model. The practical implementation and testing of the proposed designs are not covered.
1：Experimental Design and Method Selection:
The study involves the design and simulation of a CMOS-memristive fully differential transimpedance amplifier using 180nm CMOS technology. The theoretical models include the mathematical analysis of transimpedance gain and the use of memristors to replace conventional components.
2：Sample Selection and Data Sources:
The simulations are performed using 180nm CMOS model for transistors and HP memristor model.
3：List of Experimental Equipment and Materials:
The study uses 180nm CMOS technology and HP memristors for simulation.
4：Experimental Procedures and Operational Workflow:
The study involves simulating four different designs of the amplifier, comparing the performance of conventional and memristor-based designs in terms of gain, frequency response, linear range, power consumption, area, total harmonic distortion, and performance variations with temperature.
5：Data Analysis Methods:
The performance characteristics of the designs are compared and analyzed based on simulation results.
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