研究目的
Investigating the optical properties and nanostructure of Carbon dots (C-dots) synthesized in situ within different porous Silicon (PSi) Bragg reflectors to tune their emission spectral features.
研究成果
The study demonstrates that the fluorescence emission of C-dots can be tuned and enhanced by embedding them within PSi Bragg reflectors, depending on the photonic bandgap and oxidation level of the PSi host. This opens up opportunities for designing advanced nanomaterials with highly-tunable optical properties.
研究不足
The study is limited by the specific conditions under which the PSi Bragg reflectors and C-dots hybrids were synthesized and characterized. Potential areas for optimization include the control over the PSi oxidation level and the precise tuning of the Bragg reflector photonic bandgap.
1：Experimental Design and Method Selection:
The study involved synthesizing C-dots within PSi Bragg reflectors and characterizing their optical properties and nanostructure using various spectroscopic and microscopic techniques.
2：Sample Selection and Data Sources:
Single-side polished and heavily-doped p-type Si wafers were used to fabricate PSi Bragg reflectors. Different carbonaceous precursor solutions were introduced into the PSi films for C-dots synthesis.
3：List of Experimental Equipment and Materials:
Equipment included a spectrofluorimeter, confocal laser scanning microscope, transmission electron microscope, X-ray photoelectron spectrometer, and others. Materials included Si wafers, hydrofluoric acid, ethanol, glucose, sucrose, etc.
4：Experimental Procedures and Operational Workflow:
PSi Bragg reflectors were fabricated by Si anodization, followed by thermal oxidation. C-dots were synthesized in situ within the PSi films, and their properties were characterized.
5：Data Analysis Methods:
Data were analyzed using software like ZEN 2009 and Imaris for confocal microscopy images, and AVANTGE for XPS data.
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PEG-diNH2
O,O′-Bis (2-aminopropyl) polypropylene glycol-block-polyethylene glycol-block-polypropylene glycol
Sigma-Aldrich Chemicals
Precursor for C-dots synthesis
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Tube furnace
Lindberg/Blue MTM 1,200°C Split-Hinge
Thermo Scientific
Thermal oxidation of PSi films
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HRSEM
Ultra Plus
Carl Zeiss
Characterization of PSi films morphology
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FTIR spectrometer
6700
Thermo
Characterization of PSi films chemical properties
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Spectrofluorimeter
FL920
Edinburgh Instruments
Measurement of fluorescence emission spectra
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CLSM
LSM 700
Carl Zeiss
Characterization of C-dots distribution within PSi films
ZEISS LSM 990 Spectral Multiplex
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HRTEM
JEM-2100F
JEOL
Characterization of C-dots nanostructure
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XPS
ECSALAB
Thermo Scientific
Characterization of C-dots composition
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CCD spectrometer
USB4000
Ocean Optics
Measurement of interferometric reflectance spectra
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Si wafers
0.001 Ω-cm resistivity, ?100? oriented, B-doped
Sil’tronix Silicon Technologies
Substrate for fabricating PSi Bragg reflectors
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Hydrofluoric acid
48% aqueous
Merck
Used in the anodization process for PSi fabrication
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Ethanol
99.9%
Merck
Used in the anodization process for PSi fabrication
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Glucose
Sigma-Aldrich Chemicals
Precursor for C-dots synthesis
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Sucrose
Sigma-Aldrich Chemicals
Precursor for C-dots synthesis
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Sodium tripolyphosphate
Sigma-Aldrich Chemicals
Precursor for C-dots synthesis
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