研究目的
Investigating the progress in MOVPE growth of Ga2O3, focusing on homoepitaxial and heteroepitaxial deposition techniques and their implications for device applications.
研究成果
The review concludes that MOVPE is a promising technique for Ga2O3 growth, with significant progress in both homoepitaxial and heteroepitaxial deposition. However, challenges remain in defect control and phase stability, particularly for ε-Ga2O3. Future research should focus on optimizing growth conditions and understanding the fundamental properties of Ga2O3 polymorphs.
研究不足
The study highlights challenges in achieving high-quality Ga2O3 films, such as the presence of structural defects and the difficulty in controlling phase purity, especially for ε-Ga2O3. The thermal stability of ε-Ga2O3 and its conversion to β-Ga2O3 at high temperatures is also a limitation.
1：Experimental Design and Method Selection:
The study reviews recent advances in MOVPE deposition of Ga2O3, including the use of different substrates and orientations, and the impact of growth conditions on film quality.
2：Sample Selection and Data Sources:
The research utilizes β-Ga2O3 and ε-Ga2O3 films grown on various substrates such as sapphire, GaN, and SiC.
3：List of Experimental Equipment and Materials:
Equipment includes MOVPE reactors, precursors like TMGa and TEGa, and substrates like sapphire and GaN.
4：Experimental Procedures and Operational Workflow:
Detailed growth conditions, including temperature, pressure, and precursor ratios, are discussed for optimizing film quality.
5：Data Analysis Methods:
Characterization techniques include XRD, SEM, TEM, and electrical measurements to assess film quality and properties.
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