研究目的
Investigating the physical, structural, chemical, optical, and mechanical properties of sputter-deposited Ga2O3 films, specifically the effect of growth temperature on these properties.
研究成果
Ga2O3 thin films were sputter deposited onto Si (100) and quartz by varying the substrate temperatures from RT to 800°C. The results indicate that Ga2O3 films deposited at Ts = RT – 400°C were amorphous and those deposited at Ts ≥ 500°C were nanocrystalline with a stable β-phase. The functional relationship between the structure, optical properties, and mechanical behavior of Ga2O3 films can serve as a road map to produce materials for desired technological applications.
研究不足
The study is limited to the effects of growth temperature on the properties of sputter-deposited Ga2O3 films. The potential effects of other deposition parameters, such as sputtering power and gas pressure, are not explored.
1：Experimental Design and Method Selection:
Ga2O3 films were deposited onto silicon (Si) wafers and quartz substrates by radio frequency magnetron sputtering. The effect of substrate temperature (Ts) on the properties of Ga2O3 films was investigated.
2：Sample Selection and Data Sources:
Films were deposited at different temperatures varying in the range of 25–800°C.
3：List of Experimental Equipment and Materials:
Radio frequency magnetron sputtering system, Ga2O3 target (Plasmaterials Inc.), silicon (Si) wafers, quartz substrates.
4：Experimental Procedures and Operational Workflow:
The deposition was carried out for 30 min. Thickness of the films was in the range of 40–33 nm. Substrate rotation was maintained during the entire deposition time to ensure uniform coverage on the substrate surface.
5：Data Analysis Methods:
The film composition was determined by Rutherford backscattering spectrometry (RBS). The chemical composition was determined using X-ray photoelectron spectroscopy (XPS). Structural and optical measurements were performed using X-ray diffraction (XRD) and spectrophotometry, respectively.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
