研究目的
To understand the cause of degradation in the UV light detection performance of heterojunctions comprising p-type B-doped UNCD/a-C:H films and n-type Si substrates by estimating essential junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (φb) under various temperatures.
研究成果
The heterojunctions demonstrated a rectifying action with a turn-on voltage of around 0.56 V. The ideality factor and barrier height values indicated a heavy recombination process at the junction interface at 300 K and a predominant tunneling process at low temperatures. The series resistance increased significantly at low temperatures, likely due to the decrease of carrier concentration in the B-doped UNCD/a-C:H films. These findings provide insights into the degradation of UV light detection performance in such heterojunctions.
研究不足
The study was conducted on one sample of the heterojunctions, which might lead to slightly different calculated junction parameters for other samples. The presence of structural defects in the B-doped UNCD/a-C:H films and interface states at the junction interface could affect the accuracy of the extracted parameters.
1：Experimental Design and Method Selection:
The heterojunctions were formed via pulsed laser deposition (PLD). The junction parameters were extracted via thermionic emission (TE) theory and Norde model from the measurement of dark current density–voltage (J–V) curves under various temperatures ranging from 300 to 60 K.
2：Sample Selection and Data Sources:
B-doped p-type UNCD/a-C:H films were created on n-type Si wafer substrates via PLD. The dark J–V curves were measured under both forward and reverse bias voltages at a temperature range of 60–300 K.
3：List of Experimental Equipment and Materials:
An ArF excimer laser with a wavelength of 193 nm was used for PLD. Graphite targets containing 0.1 at.% of B element were utilized. A Carl Zeiss Auriga Field Emission Scanning Electron Microscope (FESEM) and Hitashi S-4700 Scanning Electron Microscope were used for surface morphology and cross-section examination. A source meter (Keithley 2400) was used for dark I–V curves measurement.
4：1 at.% of B element were utilized. A Carl Zeiss Auriga Field Emission Scanning Electron Microscope (FESEM) and Hitashi S-4700 Scanning Electron Microscope were used for surface morphology and cross-section examination. A source meter (Keithley 2400) was used for dark I–V curves measurement.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The Si wafer substrates were cleaned and dried before the PLD procedure. B-doped p-type UNCD/a-C:H films were formed at a substrate temperature of 550 °C under H2 atmosphere. Metallic electrodes were built using a radio-frequency magnetron sputtering (RFMS) system.
5：Data Analysis Methods:
The junction parameters were estimated via TE theory and Norde model. The ideality factor and saturation current density were estimated through the slope and J-axis intercept of the linear region of the forward ln J –V plot. The barrier height was calculated from the saturation current density. The series resistance was calculated from the lowest point of the F(V)?V plot.
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