研究目的
Investigating the fabrication of metal-insulator-metal (MIM) single electron transistors (SETs) using e-beam evaporation of SiO2 as an alternative to atomic layer deposition for creating tunnel barriers, and addressing the challenges in forming high-quality, low-noise MIM tunnel junctions.
研究成果
The study demonstrates the successful fabrication of MIM SETs using e-beam deposition of SiO2, overcoming previous challenges with ALD SiO2 on platinum. The hydrogen plasma anneal is crucial for reducing interfacial platinum oxide, leading to high-quality tunnel barriers. The process shows promise for scalable, manufacturable SETs compatible with modern CMOS processes.
研究不足
The study identifies challenges in forming tunnel barriers via e-beam evaporation, including the presence of an interfacial platinum oxide that requires a hydrogen plasma anneal to reduce. Variations in tunnel barrier film thickness lead to asymmetry in junction conductances, and the actual barrier thickness is much thinner than measured by ellipsometry.
1：Experimental Design and Method Selection:
The study focuses on fabricating Pt-SiO2-Pt MIM SETs using e-beam evaporation for the SiO2 tunnel barriers, comparing it to atomic layer deposition. The process includes a post-fabrication hydrogen plasma anneal to address interfacial platinum oxide issues.
2：Sample Selection and Data Sources:
Two SET batches (Batch-A and Batch-B) were fabricated with different dielectric thicknesses to investigate the effect of the hydrogen plasma anneal.
3：List of Experimental Equipment and Materials:
High-resolution 100 kV e-beam lithography tool, PMMA and PMGI resists, platinum and titanium for metal layers, SiO2 source for e-beam evaporation, and a hydrogen plasma anneal system.
4：Experimental Procedures and Operational Workflow:
The fabrication process involves patterning source, drain, and gate leads, depositing SiO2 tunnel barriers, patterning the island, and performing a hydrogen plasma anneal. Electrical characterization is performed at room and low temperatures.
5：Data Analysis Methods:
Differential conductance measurements are used to characterize the SETs, with data analyzed based on orthodox Coulomb blockade theory to extract SET parameters.
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