研究目的
Investigating the effects of tellurium additions and stirring on the indium segregation in Ga1-xInxSb alloys obtained by the conventional vertical Bridgman method.
研究成果
The study concludes that tellurium doping enhances the indium segregation and microstructural quality of Ga1-xInxSb ingots. Te-doped ingots showed a more constant axial indium distribution and better crystallographic organization. The mechanical stirring during synthesis improved the homogeneity of indium distribution in the ingots.
研究不足
The study acknowledges the difficulty in eliminating segregation that causes constitutional supercooling in ternary alloys during directional solidification. The experimental conditions, such as the solidification rate and thermal gradient, may not fully prevent the formation of cracks and grains in the ingots.
1：Experimental Design and Method Selection:
The study used the conventional vertical Bridgman method (CVBM) under stirred and non-stirred conditions to investigate the influence of tellurium on indium segregation in Ga1-xInxSb:Te ingots.
2：Sample Selection and Data Sources:
Three Te-doped and three non-doped Ga1-xInxSb ingots were prepared. The alloys were synthesized from 6N pure pieces of GaSb and InSb in stoichiometric proportion, and 9N pure pieces of tellurium.
3：List of Experimental Equipment and Materials:
Quartz ampoules of 12 mm diameter and 120-150 mm length with a conical tip of 30° were used. The vertical Bridgman furnace had a cylindrical oven chamber with 40 mm inside diameter and 240 mm length.
4：Experimental Procedures and Operational Workflow:
The ampoules were etched, filled with high-purity argon, and sealed under a small residual argon pressure. The alloys were melted inside the ampoules, which were then unidirectionally solidified at a constant speed of
5：0 mm/hour. Data Analysis Methods:
The composition variation along the ingots was measured by Energy Dispersive Spectroscopy (EDS). Electrical conductivity and Hall measurements were performed on transversal sections of the ingots.
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