研究目的
Investigating the performance of an ultra-energy-efficient silicon photonic crystal nanocavity modulator driven by a metal-oxide-semiconductor (MOS) capacitor.
研究成果
The reported silicon photonic crystal nanocavity E-O modulator demonstrates high tuning efficiency, strong modulation strength, and low energy consumption, making it one of the most energy-efficient modulators reported. Further improvements could reduce energy efficiency by optimizing gate oxide thickness and Q-factors.
研究不足
The performance may be limited by the gate oxide thickness and Q-factors, suggesting areas for further optimization.
1：Experimental Design and Method Selection:
The modulator is designed based on a photonic crystal nanocavity on a strip silicon waveguide, utilizing an In2O3/HfO2/p-Si MOS capacitor for modulation.
2：Sample Selection and Data Sources:
A p-type silicon-on-insulator (SOI) wafer is used, with specific dimensions and doping for the silicon layer.
3：List of Experimental Equipment and Materials:
Includes electron beam lithography (EBL), reactive ion etching (RIE), atomic layer deposition (ALD), and RF sputtering for fabrication.
4：Experimental Procedures and Operational Workflow:
Fabrication involves patterning, etching, deposition, and annealing processes to create the modulator.
5：Data Analysis Methods:
Optical measurement is performed using grating couplers and an optical spectrum analyzer to evaluate the modulator's performance.
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