研究目的
Investigating the effect of indium and antimony doping on the transport properties of SnSe single crystals grown by the direct vapour transport technique.
研究成果
The study concludes that doping of SnSe with In and Sb does not enhance the thermoelectric performance of SnSe. The presence of strain due to doping degrades the thermoelectric performance, with pure SnSe showing the highest power factor and figure of merit.
研究不足
The study is limited to the temperature range of ambient to 573 K and does not explore the effects of doping beyond 10% for In and Sb. The research also does not investigate the performance of the doped SnSe in actual thermoelectric devices.
1：Experimental Design and Method Selection:
The study employed the direct vapour transport (DVT) technique for growing pure and doped SnSe single crystals. The DVT technique was chosen for its ability to produce high purity single crystals without the use of a transporting agent.
2：Sample Selection and Data Sources:
High purity powders of Sn, Se, In, and Sb were used as precursor materials. The samples included pure SnSe, 5% In, 10% In, 5% Sb, and 10% Sb doped SnSe.
3：List of Experimental Equipment and Materials:
The equipment used included a dual zone horizontal furnace, quartz ampoules, Rigaku Ultima IV Powder X-Ray Diffractometer, XL 30 Scanning Electron Microscopy for EDAX analysis, and a thermoelectric power measurement setup developed by Supernova Technology.
4：Experimental Procedures and Operational Workflow:
The single crystals were grown in a vacuum-sealed quartz ampoule under a temperature gradient. The grown crystals were characterized for structure, stoichiometry, and electrical as well as thermal transport properties.
5：Data Analysis Methods:
The data were analyzed using XRD for structural analysis, EDAX for stoichiometric analysis, and various setups for measuring thermoelectric power, dc electrical conductivity, and thermal conductivity.
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