研究目的
Investigating the epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe3Si for vertical semiconductor spintronic devices.
研究成果
The developed CoFe/n-Ge/Fe3Si structure has great potentialities to be utilized as vertical-type Ge channel spintronic devices, demonstrating the feasibility of epitaxial growth of n-type Ge layers on Fe3Si and their application in spintronics.
研究不足
The study focuses on the growth and electrical characterization of Sb-doped Ge layers on Fe3Si, with potential for optimization in the growth process and device performance.
1：Experimental Design and Method Selection:
The study combines solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) with Sb doping to form n-type Ge layers on Fe3Si.
2：Sample Selection and Data Sources:
Commercial p-Ge(111) substrates were used for the growth of ferromagnetic Fe3Si layers.
3：List of Experimental Equipment and Materials:
Ultrahigh vacuum chamber, Knudsen cells for co-evaporating Fe and Si, reflection high-energy electron diffraction (RHEED) for surface observation, atomic force microscopy (AFM) for surface flatness measurement.
4：Experimental Procedures and Operational Workflow:
After chemical cleaning, p-Ge(111) substrates were loaded into an ultrahigh vacuum chamber. Fe3Si layers were grown below 130 ?C, followed by Si termination. A Ge layer was grown by combining SPE and MBE, with Sb doping at 175 ?C.
5：Data Analysis Methods:
Electrical properties were characterized by measuring current–voltage characteristics of fabricated vertical devices.
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