研究目的
To demonstrate THz generation by optical rectification in GaP crystals using excitation average power levels exceeding 100 W, paving the way towards Watt-level, ultrafast laser pumped THz sources.
研究成果
The demonstration of THz generation with excitation powers exceeding 100 W using a compact, high-average power ultrafast oscillator paves the way for the development of watt-level THz-TDS sources. Ongoing work aims to optimize laser parameters and explore other THz generation techniques for higher efficiency.
研究不足
The conversion efficiency is limited by THz reabsorption, two-photon-absorption (TPA) of the pump beam, and strong self-focusing (SF) due to the high nonlinear refractive index of GaP. Damage to thicker crystals at high pump powers also poses a challenge.
1：Experimental Design and Method Selection:
The experiment utilizes a diode-pumped Yb:YAG modelocked thin-disk laser for THz generation via optical rectification in GaP crystals.
2：Sample Selection and Data Sources:
GaP crystals of varying thicknesses (1 mm, 2 mm, 3 mm) were used to study the effect of crystal thickness on THz generation efficiency.
3：List of Experimental Equipment and Materials:
A home-built Semiconductor Saturable Absorber Mirror (SESAM), soliton mode-locked thin disk laser (TDL), GaP crystals, off-axis parabolic mirrors, a commercial pyroelectric power meter (Ophir RM-9), and a fast scan module (APE scanDelay 15ps).
4：Experimental Procedures and Operational Workflow:
The laser output was focused onto GaP crystals for THz generation, with the THz power measured and the electric field characterized via Electro Optic-Sampling (EOS).
5：Data Analysis Methods:
The THz power spectrum and temporal electric field were analyzed to understand the generation efficiency and limitations.
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