研究目的
To present a novel high output power class H audio amplifier design with GaN transistors output stage, focusing on improving efficiency and linearity while reducing THD+N ratio.
研究成果
The proposed class H audio amplifier with GaN transistors output stage achieves a peak output power of 37W with 87% peak power efficiency and a minimum THD+N of -70.17dB. The design allows full class H mode operation across the whole output swing, demonstrating good linearity and efficiency.
研究不足
The design does not include ZVS operation and PWM-PFM dual mode operation, leading to significant switching loss. Mismatches of devices are not considered in the simulation, which could affect the comparison with measurement results.
1：Experimental Design and Method Selection:
The design is implemented in
2：18-μm BCD process, utilizing GaN transistors for the output stage to improve efficiency and linearity. Sample Selection and Data Sources:
The audio load is set to be 32Ω.
3：2Ω. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: GaN transistors,
4：18-μm BCD process, bootstrap capacitors, and diodes. Experimental Procedures and Operational Workflow:
The design includes a class AB amplifier, a reference-tracking buck converter, and a control block to generate supply voltage reference and output common mode voltage reference.
5：Data Analysis Methods:
Fourier transform is applied on the transient output waveform to simulate THD+N.
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