研究目的
To study a new detector structure implementing n-on-p active edges and analyze the electrical characteristics of the device using Secondary Ion Mass Spectroscopy (SIMS) data as input for the simulation algorithm.
研究成果
TCAD simulation was used to study the effects of radiation damage in active edge sensors, showing that non-depleted regions evolve from the structure’s lower corner with increasing fluences. This may help improve the design of edgeless planar pixel sensors and avoid breakdown risks at high radiation doses.
研究不足
The study is limited to simulations and does not include experimental validation of the results. The radiation damage model used may not capture all aspects of real-world radiation effects.
1：Experimental Design and Method Selection:
The study uses the SilvacoTM ATLAS Technology Computer Aided Design (TCAD) software for simulation. A three level trap model for p-type silicon material is employed to simulate radiation damage effects.
2：Sample Selection and Data Sources:
The study uses doping profiles obtained through SIMS measurements for accurate structure definition.
3：List of Experimental Equipment and Materials:
High resistivity (>10 kΩ-cm) p-type silicon substrate in an n-on-p configuration with a total thickness of 150 μm. The structure was produced by ADVACAM Ltd.
4：Experimental Procedures and Operational Workflow:
The simulation involves defining the device structure, applying the radiation damage model, and analyzing the electrical characteristics such as breakdown voltage, leakage current, and charge carrier distributions.
5：Data Analysis Methods:
The analysis focuses on the variation of the active region with increasing radiation fluences, using the TCAD simulator to study hole concentration and breakdown voltage.
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