研究目的
Investigating the performance of SnSe/SiO2/Si heterostructures for ultrahigh-sensitivity, ultrafast and broadband optical position sensitive detectors.
研究成果
The SnSe/SiO2/Si heterostructure PSD device exhibited excellent lateral photovoltaic performance with ultrahigh sensitivity and ultrafast response/relaxation speeds. The unique characteristics of the SnSe/Si vdWs interface were key to the device's performance, offering great potential for high-performance optoelectronic devices.
研究不足
The study focuses on the fabrication and characterization of SnSe/SiO2/Si heterostructures for PSD applications. The limitations include the need for further optimization of the film deposition process to enhance the device performance and the exploration of other materials for similar applications.
1：Experimental Design and Method Selection:
The SnSe films were grown on (100)-oriented n-Si substrates by magnetron sputtering technique. The substrates were cleaned and treated with HF solution to remove the natural oxide layer. The deposition parameters were controlled to achieve the desired film properties.
2：Sample Selection and Data Sources:
The samples were characterized using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscope (HRTEM). The lateral photovoltaic effect (LPE) curves were measured using a Keithley 2000 voltmeter combined with a three-dimensional electric motorized stage.
3：List of Experimental Equipment and Materials:
Magnetron sputtering system, Keithley 2000 voltmeter, Keithley 2400 Sourcemeter, digital oscilloscope (Keysight DSOX 2012A), pulsed laser, and various lasers with different wavelengths.
4：Experimental Procedures and Operational Workflow:
The SnSe films were deposited on Si substrates under controlled conditions. The films were then characterized for their structural and electronic properties. The PSD devices were fabricated and their performance was evaluated under different laser powers and wavelengths.
5：Data Analysis Methods:
The data from the LPE measurements were analyzed to determine the sensitivity and response times of the PSD devices. The structural data from Raman, XPS, and HRTEM were used to correlate the film properties with the device performance.
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