研究目的
To design, fabricate, and characterize a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode for UV light detection applications.
研究成果
The 4H-SiC based BJT and photodiode integrated circuit functions as a current switch from room temperature to 400 ?C, with a transfer voltage that decreases with temperature. The on/off ratio is >80 across this temperature range and could be significantly improved with a light-blocking layer on the BJT, making it suitable for pixelated UV photography sensors.
研究不足
The off-state current of the circuit is higher than desired due to light-induced current from the BJT, suggesting the need for a light-blocking layer to improve the on/off ratio.
1、Experimental Design and Method Selection
The study involves the design and fabrication of a 4H-SiC n-p-n BJT and a p-i-n photodiode sharing the same epitaxial layers and contacts. The BJT acts as a switch for the photodiode.
2、Sample Selection and Data Sources
The devices were fabricated on a 100 mm diameter n-type 4H-SiC wafer with epitaxial layers.
3、List of Experimental Equipment and Materials
A collimated UV LED (SOLIS-365C, Thorlabs) was used as the light source.
4、Experimental Procedures and Operational Workflow
The devices were tested from room temperature to 400 ?C, with the photodiode reverse biased and the BJT switching the photo current.
5、Data Analysis Methods
The performance of the devices and circuits was characterized by measuring current-voltage (I-V) curves, Gummel plots, and switching characteristics.
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