研究目的
To develop high performance nitride-based electronic devices, specifically high electron mobility transistors (HEMTs), for power applications at X-band frequencies.
研究成果
The AlGaN/AlN/GaN HEMT structures grown on 6H-SiC substrates demonstrated excellent electrical properties and device performance, achieving a maximum continuous-wave output power of 110.9 W at 8 GHz. The results indicate strong potential for GaN-based HEMT devices in high-power applications at X-band frequencies.
研究不足
The study does not discuss the scalability of the fabrication process or the cost implications of using 6H-SiC substrates and MOCVD growth. Additionally, the environmental and operational stability of the devices under long-term use is not addressed.
1：Experimental Design and Method Selection:
The study involved growing AlGaN/AlN/GaN HEMT structures on 3-inch semi-insulating 6H-SiC substrates using metal organic chemical vapor deposition (MOCVD). The design rationale included introducing a high mobility GaN channel layer and an AlN interlayer to improve electron mobility and 2DEG sheet density.
2：Sample Selection and Data Sources:
The samples were AlGaN/AlN/GaN HEMT structures grown on 6H-SiC substrates. Data sources included DCXRD for crystal phase investigation, AFM for surface morphology, and electrical measurements for device performance.
3：List of Experimental Equipment and Materials:
Equipment included MOCVD for growth, AFM for surface analysis, and HP 4142 semiconductor parameter analyzers for electrical measurements. Materials included trimethylaluminum, trimethylgallium, and ammonia as precursors.
4：Experimental Procedures and Operational Workflow:
The process involved growing the HEMT structure, fabricating the device with ohmic contacts and Schottky gates, and measuring electrical and high-frequency characteristics.
5：Data Analysis Methods:
Data analysis involved measuring sheet resistance, Hall mobility, 2DEG density, and device performance metrics like output power and efficiency.
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