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Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications

DOI:10.1115/1.4041813 期刊:Journal of Electronic Packaging 出版年份:2018 更新时间:2025-09-04 15:30:14
摘要: GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics, (2) practical thermal management solutions for GaN power electronics, and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.
作者: Seung Kyu Oh,James Spencer Lundh,Shahab Shervin,Bikramjit Chatterjee,Dong Kyu Lee,Sukwon Choi,Joon Seop Kwak,Jae-Hyun Ryou
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To review thermal management strategies for GaN-based high-power electronic and photonic devices, focusing on thermal metrology techniques, thermal management solutions for power electronics, and packaging techniques for LEDs in automotive applications.

The paper concludes that effective thermal management is crucial for the performance and reliability of GaN-based high-power devices in automotive applications. It summarizes the advantages and limitations of various thermal metrology techniques and thermal management strategies, emphasizing the need for continued innovation in substrate materials, device design, and packaging techniques to address thermal challenges.

The review highlights challenges such as the complexity of accurately measuring junction temperatures due to device material diversity and geometry restrictions, the high cost of certain substrates like SiC and diamond, and the need for improved thermal management solutions to enhance device reliability and performance under high-power conditions.

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