1：Experimental Design and Method Selection:

The a-IGZO is fabricated on n-type silicon substrate as experimental sample. N-type silicon wafer had RCA clean, a-IGZO layer was formed by atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) at room temperature. The deposition apparatus mainly was composed of a plasma jet, an ultrasonic generator, and a hot plate. The pulsed DC power supply and main gas (also called discharge gas) generated the downstream plasma. The position of plasma jet was fixed and the substrate was on the xy directional scan system to have material uniformly deposited. The gap distance between hot plate and plasma jet was set, start point, endpoint and the pitch were set. Subsequently, the scan system moved start point to the end point. The pitch controlled the overlap of the two paths of x direction. The scan rate of x direction and y direction also could be adjustable. By furnace annealing, the process was to eliminate the defects caused by the film internal stress or other external factors. The structure of the film could be reformed. Making use of thermal energy let the atomic structure rearrange and be repaired. Finally, the a-IGZO was treated by Ar/H2 plasma. The recipe of plasma treatment was as followed. The scan rate of x direction was 20 mm/sec, and the scan rate of y direction was 50 mm/sec. The N2 gas flow rate of main gas was 21SLM. The carrier gas flow rate (CG) was varied from 150 sccm to 240 sccm, gap distance (Gap) was

2：7 mm, scan times was 1 time, pitch was 2 mm. Sample Selection and Data Sources:

The a-IGZO is fabricated on n-type silicon substrate as experimental sample.

3：List of Experimental Equipment and Materials:

The deposition apparatus mainly was composed of a plasma jet, an ultrasonic generator, and a hot plate.

4：Experimental Procedures and Operational Workflow:

The a-IGZO was treated by Ar/H2 plasma. The recipe of plasma treatment was as followed. The scan rate of x direction was 20 mm/sec, and the scan rate of y direction was 50 mm/sec. The N2 gas flow rate of main gas was 21SLM. The carrier gas flow rate (CG) was varied from 150 sccm to 240 sccm, gap distance (Gap) was

5：7 mm, scan times was 1 time, pitch was 2 mm. Data Analysis Methods:

X-ray Diffraction (XRD) analysis, Secondary ion mass spectrometer (SIMS) analysis, X-ray photoelectron spectroscopy (XPS) analysis, and optical transmittance analysis were used to investigate the IGZO thin films.