研究目的
To investigate the electrical characteristics of amorphous IGZO TFTs fabricated by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) with hydrogen plasma treatment.
研究成果
The a-IGZO TFTs fabricated by AP-PECVD with Ar/H2 plasma treatment show improved electrical properties, including higher mobility and better subthreshold swing, compared to untreated devices. The optimal treatment condition is found to be 150 sccm Ar/H2 plasma.
研究不足
The study is limited to the effects of hydrogen plasma treatment on the electrical characteristics of a-IGZO TFTs fabricated by AP-PECVD. The scalability and long-term stability of the treated TFTs are not discussed.
1：Experimental Design and Method Selection:
The study involves the fabrication of a-IGZO TFTs using AP-PECVD and subsequent hydrogen plasma treatment to improve the active layer's electrical characteristics.
2：Sample Selection and Data Sources:
The samples are a-IGZO TFTs fabricated on heavily doped n-type silicon wafers.
3：List of Experimental Equipment and Materials:
Equipment includes AP-PECVD for deposition, E-gun for ZrO2 layer deposition, and thermal coater for Al deposition. Materials include indium nitrate, gallium nitrate, and zinc nitrate as precursors.
4：Experimental Procedures and Operational Workflow:
The process involves deposition of ZrO2 gate oxide, IGZO thin film deposition by APPJ, lithography for active region definition, and Ar/H2 plasma treatment.
5：Data Analysis Methods:
Electrical characteristics such as field effect mobility, subthreshold swing, and I on/I off ratio are analyzed.
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