研究目的
Investigating the effects of n-butyl amine (BA) incorporation on the performance of perovskite light emitting diodes (PeLEDs), focusing on film morphology, optical characteristics, and electrical properties.
研究成果
BA incorporation terminates grain surfaces and inhibits crystal growth, enhancing radiative recombination. However, excessive BA leads to loose films and increased shunt paths, outweighing optical benefits. Optimal PeLED performance is achieved with moderate BA incorporation, balancing optical and electrical characteristics.
研究不足
The study highlights that excessive BA incorporation leads to loose films and increased shunt paths, deteriorating LED performance. The balance between optical benefits and electrical detriments of BA incorporation is crucial, requiring moderate BA loads for optimal PeLED performance.
1：Experimental Design and Method Selection:
The study involved introducing n-butyl amine (BA) into the perovskite precursor to modulate film growth and improve PeLED performance.
2：Sample Selection and Data Sources:
Perovskite films were fabricated with varying BA molar ratios (0%, 5%, 10%, 20%, 30%, 50%) to evaluate the impact of BA incorporation.
3：List of Experimental Equipment and Materials:
Materials included n-butyl amine, n-butylammonium bromide, dimethyl sulfoxide, dimethylformamide, lead bromide, and MABr. Equipment included FE-SEM, AFM, XRD, FTIR, UV-Vis spectrophotometer, and PL spectrometer.
4：Experimental Procedures and Operational Workflow:
Perovskite films were spin-coated, treated with anti-solvent, and annealed. LEDs were fabricated with a structure of ITO/PEDOT:PSS/Perovskite/PFN/TPBi/LiF/Ag.
5：Data Analysis Methods:
Morphological, structural, optical, and electrical characteristics were analyzed using SEM, AFM, XRD, FTIR, absorption and PL spectra, and current density-voltage-luminance measurements.
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n-butyl amine
Tokyo Chemical Industry
Modulating the growth of perovskite films
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n-butylammonium bromide
Tokyo Chemical Industry
Modulating the growth of perovskite films
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dimethyl sulfoxide
Sigma-Aldrich
Solvent in perovskite precursor solution
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dimethylformamide
Sigma-Aldrich
Solvent in perovskite precursor solution
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lead bromide
Shanghai King Tech Chemicals Co., LTD.
Precursor for perovskite film fabrication
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MABr
Shanghai King Tech Chemicals Co., LTD.
Precursor for perovskite film fabrication
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PEDOT:PSS
CleviosTM PVP AI4083
Shanghai King Tech Chemicals Co., LTD.
Hole-transport layer in LED fabrication
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PFN
Derthon Optoelectronic Materials Science Technology Co., LTD.
Electron-transport layer in LED fabrication
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TPBi
Electron-transport layer in LED fabrication
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LiF
Sigma-Aldrich
Electrode material in LED fabrication
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Ag
Electrode material in LED fabrication
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