研究目的
Investigating the ultrafast broadband all-optical switching in the sub-bandgap region of amorphous selenium thin films, where intrinsic absorption is very weak, through transient defect dynamics.
研究成果
The study demonstrates a novel ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of a-Se thin films, attributed to short-lived transient defect dynamics. First principle calculations support the experimental findings, suggesting the potential for high-speed optical switching applications.
研究不足
The study is limited to the specific properties of amorphous selenium thin films and the experimental conditions described. The full non-adiabatic simulation of photo-excitation is treated approximately, which may not capture all complexities of the process.
1：Experimental Design and Method Selection:
Employed a pump-probe optical absorption spectrometer to study induced absorption by fs laser.
2：Sample Selection and Data Sources:
Used ~
3：4 μm thick a-Se thin film deposited on a quartz substrate by thermal evaporation. List of Experimental Equipment and Materials:
120 fs pulses centered at 800 nm, optical parametric amplifier, computer-controlled motion controller, CaF2 plate for white light continuum generation.
4：Experimental Procedures and Operational Workflow:
Pump and probe beams spatially overlapped on the sample, IA calculated from transmitted intensities.
5：Data Analysis Methods:
Used a model with two exponential decays to fit the experimental data, calculated the temporal evolution of the imaginary part of the complex dielectric function.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
