摘要： In data storages, spin, ferroelectric or optical index has been utilized as the information carrier, and the binate couplings among the three parameters are explored to increase the resistance states and resultant data-density. However, studies holding all of the three information indices are still blank, where the risen number of information carriers from previous two to three provides opportunities for inducing novel phenomena and distinct resistance states. In this work, using the spin-electron-photon resolved theory, we demonstrate the feasibility of spin, ferroelectric and optical interactions, which are further detected by a spin- and ferroelectric-modulated photovoltaic effect in La2/3Sr1/3MnO3/BiFeO3/Fe4N multiferroic tunnel junctions (MFTJs). Moreover, on the basis of spin- and ferroelectric-induced four resistance states in MFTJs, the special photovoltaic effect shall split each resistance state into the light-on and light-off switching states, which finally leads to the multiple resistance states. Besides, nearly 100% spin-polarized photocurrent and large tunneling magnetoresistance (electroresistance) are realized in this MFTJs. These results reveal that interacted spin, ferroelectric and optical indices can simultaneously serve as information carriers in storages, which provide guidance for developing efficient data memories.