摘要： Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low-power integration circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) and have been demonstrated to overcome the thermionic limit, that results intrinsically in subthreshold swings of at least 60 mV/dec at room temperature. Here we demonstrate complementary TFETs based on few-layer black phosphorus, in which multiple top gates create electrostatic doping in the source and drain regions. By electrically tuning the doping types and levels in the source and drain regions, the device can be reconfigured to allow for TFET or MOSFET operation and can be tuned to be n-type or p-type. Owing to proper choice of materials and careful engineering of device structures, record high current densities have been achieved in 2D TFETs. Full band atomistic quantum transport simulations of the fabricated devices agree quantitatively with the I-V measurements which gives credibility to the promising simulation results of ultra-scaled phosphorene TFETs. Using atomistic simulations, we project substantial improvements in the performance of the fabricated TFETs when channel thicknesses and oxide thicknesses are scaled down.