研究目的
Investigating the efficiency of n‐type bifacial solar cells with a rear interfacial SiOx/n+:poly‐Si passivating contact fabricated using an industrial inline plasma‐enhanced chemical vapor deposition (PECVD) tool.
研究成果
The passivating contact stack based on an interfacial oxide and n+‐doped poly‐Si layer fabricated by an inline PECVD tool demonstrated excellent passivation quality and achieved efficiencies up to 22.8% with excellent cell Voc values up to 698 mV. The process flow uses well‐established industrial tools and high‐temperature commercial screen‐printed metallization, making it highly relevant to the global PV industry.
研究不足
The study notes that further optimization of the n+:poly‐Si layers is needed to improve fill factor values to >81.5% with a tighter distribution. Additionally, optimization of the front antireflective coating could boost Jsc > 41 mA cm2.
1：Experimental Design and Method Selection:
The study used an industrial inline PECVD tool for the deposition of the rear interfacial SiOx and n+:poly‐Si layers. The process included annealing to enable crystallization and hydrogenation with a thermally activated SiNx capping layer.
2：Sample Selection and Data Sources:
'M2', 244.3 cm2, n‐type, Cz‐Si wafers were used. The wafers underwent saw damage etching, alkaline texturing, RCA clean, and boron diffusion before the deposition of the passivating contact layers.
3：3 cm2, n‐type, Cz‐Si wafers were used. The wafers underwent saw damage etching, alkaline texturing, RCA clean, and boron diffusion before the deposition of the passivating contact layers.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included an inline PECVD tool (customized MAiA, Meyer Burger, Germany), a commercial tube furnace (Quantum, Tempress/Amtech), and a GridTouch measurement system from Pasan. Materials included n‐type Cz‐Si wafers, KOH solution, HF acid, SiH4/H2 for poly‐Si, PH3 as the dopant source, and commercial fire‐through metal pastes.
4：Experimental Procedures and Operational Workflow:
The process flow included saw damage etching, alkaline texturing, RCA clean, boron diffusion, deposition of SiOx and n+:poly‐Si layers, annealing, passivation with AlOx/SiNx/SiOx stack, screen‐printing of metal fingers, and cofiring in an industrial fast‐firing furnace.
5：Data Analysis Methods:
The effective minority carrier lifetime (τeff), iVoc, and surface saturation current density (J0) were measured by contactless quasi‐steady‐state photo‐conductance decay (QSS‐PC) measurements. Full‐area current‐voltage (I‐V) measurements were conducted using a GridTouch measurement system.
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