研究目的
To demonstrate a MEMS-based tunable grating coupler capable of changing the central wavelength and effectively avoiding the pull-in effect.
研究成果
The MEMS-based tunable grating coupler demonstrated a tunable range of 22.8 nm under an actuation voltage of up to 12 V, effectively avoiding the pull-in effect with supporting arms. The device is promising for broadening the bandwidth range and controlling the beam angle in silicon photonics.
研究不足
The actuation voltage is relatively high (up to 12 V), and the device's performance could be further optimized by reducing the actuation voltage and optimizing structure parameters.
1：Experimental Design and Method Selection:
The grating structure is fabricated on a suspended cantilever with supporting arms and can be tuned by an applied voltage. The design includes supporting arms to avoid the pull-in effect.
2：Sample Selection and Data Sources:
The device is fabricated on a standard SOI platform with a 220-nm-thick silicon core layer and 2-μm-thick buried oxide layer.
3：List of Experimental Equipment and Materials:
E-beam lithography (EBL) for patterning, inductively coupled plasma (ICP) dry etching for etching, and vapor hydrogen fluoride (VHF) for releasing the cantilever structure.
4：Experimental Procedures and Operational Workflow:
The fabrication process involves multiple rounds of EBL and ICP dry etching to define the grating structure, waveguide, and suspended area. The final step is releasing the cantilever structure with VHF.
5：Data Analysis Methods:
The transmission spectra of the tunable grating coupler are measured under different applied voltages to characterize the tuning performance.
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