研究目的
To investigate the modification of SiO2 thin film surface morphology using PMMA and octadecyltrichlorosilane (OTS) and its impact on the electrical performance of organic thin film transistors.
研究成果
The modification of SiO2 thin films with PMMA and OTS significantly improves surface flatness and reduces surface energy, leading to enhanced electrical performance of organic thin film transistors, including higher carrier mobility and lower threshold voltage.
研究不足
The study is limited by the specific conditions of thermal oxidation and spin coating, which may not be universally applicable. The performance improvements are specific to the materials and methods used.
1：Experimental Design and Method Selection:
The study involved the preparation of SiO2 thin films by thermal growth method and PMMA films by spin coating. OTS was used to modify the SiO2 surface.
2：Sample Selection and Data Sources:
Heavily doped p-Si (100) wafers were used as substrates.
3：List of Experimental Equipment and Materials:
Equipment included a thermal growth system, spin-coating machine, atomic force microscope (AFM), and ST2000-DLXn thickness measurement equipment. Materials included PMMA, OTS, copper phthalocyanin, and various solvents.
4：Experimental Procedures and Operational Workflow:
The process involved cleaning the Si wafers, thermal oxidation to grow SiO2 films, spin-coating PMMA films, modifying SiO2 with OTS, and fabricating organic thin film transistors.
5：Data Analysis Methods:
AFM was used to analyze surface morphology, and electrical performance was evaluated based on field-effect mobility and threshold voltage.
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