研究目的
Investigating the short circuit (SC-SOA) capability of 1.2 kV SiC MOSFETs and JBSFETs, and proposing a new short circuit failure mechanism related to melting of the top Al metallization.
研究成果
The 1.2 kV rated 4H-SiC JBSFET has superior short circuit capability compared with conventional MOSFETs due to a smaller drain saturation current. A new short circuit failure mechanism related to melting of the top Al metallization is proposed, supported by non-isothermal TCAD numerical simulations and SEM investigation with EDS analysis.
研究不足
The study focuses on 1.2 kV SiC MOSFETs and JBSFETs, and the proposed failure mechanism may not apply to devices with different structures or materials. The accuracy of EDS analysis with scattered element results is noted as a limitation.
1：Experimental Design and Method Selection:
The study involved characterizing and testing the SC-SOA behavior of
2：2 kV SiC MOSFETs and JBSFETs. Non-isothermal TCAD numerical simulations and SEM measurements with EDS analysis were used to analyze the failure mechanism. Sample Selection and Data Sources:
Fabricated
3：2 kV SiC MOSFETs and JBSFETs were used, with static electrical characteristics measured using the B1505 Keysight Curve Tracer. List of Experimental Equipment and Materials:
B1505 Keysight Curve Tracer, high-voltage supply (VDC), film capacitor (CSW), CREE gate driver card (CRD-001), SEM with EDS analysis tool.
4：Experimental Procedures and Operational Workflow:
SC characterization was performed at Vd=800 V and Vg=20 V with increasing gate pulse width until device failure was observed.
5：Data Analysis Methods:
The SC analytical model relates the SC time (tSC) to the saturated drain current Id,sat, with non-isothermal TCAD numerical simulations and SEM investigation with EDS analysis used to understand the physics and analyze the failure mechanism.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
