研究目的
To study the effect of oxygen concentration on the properties of silicon nitride (SiNx) thin films prepared by plasma-enhanced atomic layer deposition (PEALD).
研究成果
The study demonstrates that oxygen concentration significantly affects the microstructural, optical, and electrical properties of SiNx films. Higher oxygen concentrations result in lower refractive indices, higher band-gap energies, and better electrical insulation. These findings are valuable for the development of SiNx films for optoelectronic applications.
研究不足
The study is limited to the effects of oxygen concentration on SiNx films prepared by PEALD. The findings may not be directly applicable to films prepared by other methods or with different compositions.
1：Experimental Design and Method Selection:
Silicon oxynitride (SiON) films with different oxygen concentrations were deposited on Si (100) substrates using PEALD. The precursors for Si, N, and O were tris(dimethylamino)silane (TDMAS), N2 plasma, and O2 plasma, respectively. The oxygen concentration was varied by changing the N2/O2 ratio during deposition.
2：Sample Selection and Data Sources:
p-type Si (100) wafers were used as substrates. The films were characterized using x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).
3：List of Experimental Equipment and Materials:
BENEQ TFS200 ALD system for film deposition, Bruker D8 XRR, Bruker icon AFM, SOPRA GES-5E SE, SPECS XPS, and HIOKI 200D GDOES for characterization.
4：Experimental Procedures and Operational Workflow:
The substrates were cleaned using a standard RCA process before deposition. Each ALD cycle included TDMAS pulse, Ar purge, plasma processing, and another Ar purge. The films were characterized post-deposition for their microstructural, optical, and electrical properties.
5：Data Analysis Methods:
The XRR data were simulated with a bilayer model. SE data were fitted using the Tauc-Lorentz oscillator model. XPS data were analyzed to determine chemical composition and bonding states.
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