研究目的
Investigating the use of a capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet for silicon etching with di?uoromethane (CH2F2) as the etch gas, focusing on the effects of etching gas composition and plasma jet operating parameters on the etching rate and profile.
研究成果
The research demonstrated the feasibility of using a capacitivly coupled RF double-pipe Ar/CH2F2 plasma jet for silicon etching. The etching process was found to rely on chemical reactions with fluorine radicals rather than physical ion etching. The etching rate was controllable by adjusting the CH2F2 gas flow rate and nozzle distance, achieving a maximum rate of 17 μm/min at a plasma power of 100 W.
研究不足
The study is limited to the use of CH2F2 as the etch gas and does not explore other potential etch gases. The atmospheric-pressure plasma jet's etching rate and profile are influenced by the operational parameters, which may limit its applicability under different conditions.
1：Experimental Design and Method Selection:
A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet was used for etching. Argon was used as the carrier gas, and CH2F2 was introduced near the silicon substrate as the etch gas.
2：Sample Selection and Data Sources:
Crystalline silicon wafer samples were etched. The etching depth was measured using an alpha step pro?lometer.
3：List of Experimental Equipment and Materials:
A double-pipe-type quartz tube plasma discharge jet, mass ?ow controller, RF power supply, alpha step pro?lometer, and optical emission spectroscopy (OES) setup.
4：Experimental Procedures and Operational Workflow:
The plasma jet was generated at atmospheric pressure, and the etching process was analyzed by OES. The electronic excitation temperature and electron density were estimated using a Boltzmann plot method and Voigt pro?le method, respectively.
5：Data Analysis Methods:
The etching rate was calculated based on the measured etching depth. The electronic excitation temperature and electron density were derived from OES data.
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