研究目的
Investigating the electrical characteristics of GaAs nanowires with the addition of boron during growth and discussing possible implications for the inclusion of p-doped B:GaAs layers in nanowire heterostructures.
研究成果
The addition of boron during the MBE growth of GaAs nanowires leads to the formation of Ohmic contacts with low contact resistances, indicating p-type behavior due to boron incorporation on antisite defects. This offers a new route for p-doping in GaAs-based nanowire heterostructures, although further optimization of growth parameters is needed to improve material quality and control over defect incorporation.
研究不足
The study is limited by the high hysteresis in back-gated measurements, attributed to interfacial states and surface adsorption, and the need for further optimization of growth parameters to improve control over defect incorporation and increase the potential tuning range.
1：Experimental Design and Method Selection:
Nanowires were grown via a self-catalyzed method directly on Si(111) using molecular beam epitaxy (MBE) at a substrate temperature of 630°C. The incorporation of boron was investigated via DC-IV measurements.
2：Sample Selection and Data Sources:
Nanowires were prepared for high-resolution transmission electron microscopy (HRTEM) measurements and electrical measurements.
3：List of Experimental Equipment and Materials:
Equipment included a Balzers thermal evaporation system for metallization, a Keithley 4200 semiconductor probe station for electrical measurements, and a scanning electron microscope (SEM) for selecting individual nanowires. Materials included powdered boron of 6N purity and various metallization schemes (Cr/Au, Au/Zn/Au, Ti/Au).
4：Experimental Procedures and Operational Workflow:
Nanowires were grown under boron flux, processed for HRTEM and electrical measurements, and characterized using DC-IV measurements in various configurations.
5：Data Analysis Methods:
Data from back-gated IV curves were used to calculate carrier mobilities and densities, assuming either a homogeneous distribution of carriers or concentration in a shell near the surface.
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