研究目的

Investigating the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field.

研究成果

The performance of the tested SiPM devices (Hamamatsu VUV3, FBK-RGB, and FBK-LF) is not significantly affected by external electric fields perpendicular to the surface, up to 30 kV/cm, at cryogenic temperatures. No visible damage was observed on the devices after exposure to high electric fields. This supports the potential use of SiPMs in experiments requiring operation in high electric fields at cryogenic temperatures, such as nEXO.

研究不足

The study was conducted in liquefied CF4 instead of liquid xenon (LXe), which was a practical alternative but does not explore the characteristics of LXe breakdown relevant to nEXO. The long-term stability of SiPMs operating in high external electric fields and possible effects due to surface charge build-up were not addressed in this study.