研究目的
Investigating the surge current capability of selected SiC devices for low voltage AC distribution system applications.
研究成果
The tested SiC MOSFETs showed good consistency in overcurrent capability, with the ability to withstand up to 3x the nominal current for a 60 Hz half wave inrush event, up to 2.7x for a full AC cycle, up to 2.3x for a 100 ms overload, up to 1.8x for a 1 s overload, and 1.5x for a 3 s overload. Future work will focus on the characterization of different WBG devices and comparison with state-of-the-art Si devices.
研究不足
The study is limited to selected SiC MOSFETs and does not cover all types of WBG devices. The experimental validation is focused on low voltage AC distribution system applications.
1：Experimental Design and Method Selection:
The study involves testing SiC MOSFETs under different AC waveform conditions typical of AC electrical apparatus.
2：Sample Selection and Data Sources:
Selected SiC MOSFETs with nominal on-resistance at 25 °C of 25 m?, 40 m?, and 80 m? were tested.
3：List of Experimental Equipment and Materials:
The test setup included a capacitor bank, an air inductor, an IGCT based control power switch, and an IGBT based control power switch.
4：Experimental Procedures and Operational Workflow:
The devices were tested with different current waveforms, and the voltage drop across the devices was measured to estimate the junction temperature.
5：Data Analysis Methods:
The junction temperature was estimated based on the measurement of the instantaneous voltage and current of the device under test.
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