研究目的
Investigating the influence of interface traps and carbon-related buffer traps on AlGaN/GaN-on-silicon HEMTs and their correlation with dynamic Ron degradation under different operation conditions.
研究成果
The study demonstrates that dynamic Ron degradation in GaN HEMTs can be correlated with two different energy-level traps: deep-level traps from the carbon-related buffer layer during off-state conditions and shallow-level traps from interface states during on-state conditions. The findings provide insights into the mechanisms of trap-related degradation in GaN HEMTs under different operation conditions.
研究不足
The study is limited to AlGaN/GaN-on-silicon HEMTs and may not be directly applicable to other materials or device structures. The pulse-mode stress conditions are specific to power converter applications.
1：Experimental Design and Method Selection:
The study uses high-frequency capacitance-voltage (HFCV) and quasi-static C-V (QSCV) measurements to investigate the traps. The correlation between Ron degradation and traps distribution under different operation conditions is analyzed.
2：Sample Selection and Data Sources:
AlGaN/GaN-on-silicon HEMTs are used as samples. The devices are characterized under pulse-mode stress conditions to simulate power converter circuit operations.
3：List of Experimental Equipment and Materials:
Keithley 4200A Semiconductor Characterization System and ultra-fast pulse I-V PMU module 4225 are used for device measurement.
4：Experimental Procedures and Operational Workflow:
The devices are subjected to pulse-mode stress with varying off-state drain voltages, duty cycles, and on-state gate voltages. Dynamic Ron degradation is monitored, and C-V measurements are performed to extract trap distributions.
5：Data Analysis Methods:
The Shockley-Read-Hall (SRH) recombination theory is applied to extract the energy level and density distribution of traps from the C-V measurements.
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