研究目的
To demonstrate that post annealing could control the layer thickness of 2D MoS2 and SnS2 films transferred on a SiO2/Si substrate by varying the annealing temperature and time.
研究成果
The study demonstrated that the thickness of 2D-MoS2 and SnS2 flakes could be modulated by the post-annealing process. The number of layers of both flakes is strongly dependent on the annealing temperature and time. Appropriate thermal treatment could be a control mechanism for the number of 2D atomic layers and lateral size of 2D-TMDs, which are important to manipulate the electrical and optical properties for various applications.
研究不足
The study found that low temperature annealing at 340 °C is overall insufficient to reduce the thickness while the higher temperature annealing over 450 °C up to 650 °C induces the decomposition and disappearance of flakes leading to layer-thinning. The 2D films decomposed or disappeared at temperature greater than 650 °C.
1：Experimental Design and Method Selection:
The study involved the post thermal annealing process to modulate the number of layers of mechanically exfoliated MoS2 and SnS2 thin films.
2：Sample Selection and Data Sources:
300 nm-thick SiO2 on Si substrates were cleaned with acetone, ethanol, and deionized (DI) water, followed by the mechanical exfoliation of the MoS2 and SnS2 flakes from the bulk crystal on the substrates.
3：List of Experimental Equipment and Materials:
Optical microscopy (OM, Olympus BX 51), atomic force microscopy (AFM, Park systems XE-100), and a confocal micro-Raman spectroscopy (UniRAM-5500).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Post annealing process was carried out in a quartz tube furnace under a pure Ar gas ambient with a 300 sccm flow rate. The processing windows of temperature and duration were from 200 to 650 °C and 1 to 3 hours, respectively.
5：Data Analysis Methods:
The pristine and annealed MoS2 and SnS2 flakes were characterized by OM, AFM, and Raman spectroscopy to investigate the surface conditions and film thickness.
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