研究目的
Investigating the development and performance of high-speed flexible graphene field effect transistors (GFETs) and their application in a flexible graphene-based radio frequency system, including a graphite patch antenna, frequency translation block, and graphene speaker, to demonstrate a graphene-based AM radio receiver operating at 2.4 GHz.
研究成果
The study demonstrates the feasibility of an all graphene/carbon flexible RF communication receiver, showcasing state-of-the-art flexible GFET with high cutoff frequency in the microwave GHz regime. The research also investigates the realization and performance of GFET doubler and demodulator, flexible graphene speaker, flexible graphite antenna, and carbon-based AM receiver, suggesting improved receiver performance with the use of semiconducting layered atomic materials.
研究不足
The performance of flexible devices is lower compared to devices fabricated on rigid substrates due to poor thermal dissipation of flexible polymer substrate at high fields. Thermo-mechanical breakdown occurs when the local hot spot temperature exceeds the glass transition temperature of the soft substrate.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of flexible GFETs with high electron and hole mobilities and intrinsic transit frequency in the microwave GHz regime. The methodology includes the use of chemical vapor deposited high-quality graphene films and the design of a flexible graphene-based RF communication system.
2：Sample Selection and Data Sources:
High-quality graphene films grown on commercial Cu-foils or films are transferred via the conventional wet-transfer process. Devices with channel length of 0.25 μm and an effective width of 60 μm are prepared for electrical measurements.
3：25 μm and an effective width of 60 μm are prepared for electrical measurements.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: JEOL-6000 FSE for electron-beam lithography, atomic layer deposition for gate dielectric films, and Agilent VNA (E8361C) for S-parameter measurements.
4：Experimental Procedures and Operational Workflow:
Fabrication of GFETs on polyimide substrates, electrical measurements at room temperature, and mechanical flexibility evaluation using custom-made manual bending test fixtures.
5：Data Analysis Methods:
Semi-empirical compact model for GFET design and analysis, implemented in Agilent ADS for linear and nonlinear RF circuit simulation.
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