研究目的
Investigating the effects of base thickness, base and sub-collector doping concentrations on the performance of In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates.
研究成果
In0.49Ga0.51P/GaAs HBT devices with good DC performances were demonstrated on 200 mm silicon substrates through a 100% Ge buffer layer. Optimizing the base doping concentration, base layer thickness, and sub-collector doping concentration achieved a DC current gain of 100, with breakdown voltages of BV ceo, BV cbo, and BV ebo at 9.43, 13.8, and 9.48 V, respectively. This enables potential monolithic integration of InGaP/GaAs HBTs with Si CMOS control circuitry on a common Si platform for applications such as power amplifiers.
研究不足
The high level of defect density in the device layer, originating from the starting layer, impacts reliability. The threading dislocation density (TDD) of both the Ge layer and device layer are in low-107/cm2, which could be improved by using higher quality Ge substrates with TDD of mid-to low- 106/cm2.
1：Experimental Design and Method Selection:
The study involved the epitaxial growth of InGaP/GaAs HBT structures on 200 mm Si substrates using a thin Ge buffer layer via MOCVD. Numerical simulation was used to optimize the base doping concentration, base layer thickness, and sub-collector doping concentration.
2：Sample Selection and Data Sources:
The samples were fabricated on epitaxial films grown directly on a thin Ge layer on Si substrates.
3：List of Experimental Equipment and Materials:
MOCVD for epitaxial growth, standard photolithography for device fabrication, wet etching for mesa formation, and Ni/GeAu/Ni/Au and Ti/Au for n-type and p-type contacts, respectively.
4：Experimental Procedures and Operational Workflow:
The growth started with a n-GaAs sub-collector, followed by a n-GaAs collector, p-GaAs base layer, n-In
5：49Ga51P emitter, n-GaAs sub-emitter, and n-InGaAs cap for ohmic contact formation. Data Analysis Methods:
The performance of the HBTs was analyzed through common emitter current-voltage characteristics, Gummel plots, and breakdown voltage measurements.
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