研究目的
Investigating the stabilization of ferroelectric HfxZr1?xO2 films using a low thermal budget millisecond flash lamp annealing technique.
研究成果
The study successfully demonstrated ferroelectric behavior in HfxZr1?xO2 films using a low thermal budget millisecond flash lamp annealing technique, achieving characteristics comparable to those obtained with higher thermal budget methods. The technique offers a promising alternative for the crystallization of ferroelectric HZO films, with potential applications in non-volatile memory elements.
研究不足
The actual temperature reached during the millisecond flash anneal process is not trivial to measure and is dependent on the flash energy and the material structure of the sample. The spectral output of the xenon lamps and the absorption characteristics of the materials involved complicate the precise understanding of the crystallization mechanisms.
1：Experimental Design and Method Selection:
The study utilized a millisecond flash lamp annealing (FLA) technique involving pre-heating a sample at an intermediate temperature prior to the delivery of an energy pulse of millisecond duration using an array of xenon flash lamps.
2：Sample Selection and Data Sources:
Highly doped Si substrates were used, with HZO films grown using alternating cycles of TEMAH and ZrCMMM precursors.
3：List of Experimental Equipment and Materials:
Equipment included an Oxford Instruments plasma enhanced atomic layer deposition (PEALD) system, a Bruker D8 Discover diffractometer, and a JEOL JEM-ARM200F microscope. Materials included tetrakis(dimethylamino)titanium (TDMAT) and tetrakis(ethylmethylamino)hafnium (TEMAH).
4：Experimental Procedures and Operational Workflow:
The process involved deposition of TiN and HZO layers, followed by annealing and characterization using CV, PE, PUND, and leakage measurements.
5：Data Analysis Methods:
Data were analyzed using XRD, CV, and PE hysteresis loops to confirm the formation of the ferroelectric phase.
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