研究目的
To extend the numerically efficient B¨uttiker-probe model to handle carrier recombination and generation in the nonequilibrium Green’s function (NEGF) framework, avoiding the computationally expensive self-consistent Born approximation.
研究成果
The extended B¨uttiker-probe model efficiently includes incoherent scattering and handles carrier recombination and generation within the NEGF framework, offering a computationally less intensive alternative to the self-consistent Born approximation. This method enables the modeling of optoelectronic devices further from equilibrium, with potential applications in nanodevice optimization.
研究不足
The method currently uses heuristic approaches for calculating electron-hole generation and recombination probabilities, which may not capture all physical nuances. More sophisticated approaches could further enhance accuracy.
1：Experimental Design and Method Selection:
The NEGF method is used for quantum transport solutions, with incoherent scattering and recombination modeled using B¨uttiker probes.
2：Sample Selection and Data Sources:
Electronic Hamilton operators are read from density function theory tools for MoS2/BP structure and represented in a 20 band atomistic tight binding model for III-N material.
3：List of Experimental Equipment and Materials:
NEMO5, a multipurpose nanodevice simulation tool, is used for generating results.
4：Experimental Procedures and Operational Workflow:
Electrostatic potentials are determined in semi-classical/Poisson self-consistent calculations prior to quantum transport solutions. Electron and hole transport is solved within the NEGF method.
5：Data Analysis Methods:
The B¨uttiker probe method is applied to model scattering and recombination, with results analyzed to assess device performance.
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