研究目的
Investigating the dynamic annealing processes and defect relaxation time constants in 3C-SiC bombarded with 500 keV Ar ions at 100°C using X-ray diffraction, Raman scattering, and ion channeling.
研究成果
The study reveals that different defect characterization techniques can probe different aspects of defect relaxation dynamics in 3C-SiC, with defect relaxation time constants ranging from ～1 to ～6 ms. These results highlight the complexity of radiation defect dynamics in SiC and the need for multiple characterization techniques to understand dynamic annealing processes in solids.
研究不足
The study is limited to 3C-SiC bombarded at 100°C with 500 keV Ar ions. The correlation between relaxation times and the nature of the defects is proposed but requires further validation. The dependence of defect relaxation time constants on irradiation conditions such as ion mass, energy, and dose needs more study.
1：Experimental Design and Method Selection:
The study used pulsed-ion-beam experiments to investigate defect dynamics in 3C-SiC. The total dose was delivered as a train of equal square pulses, each with a duration of ton and an instantaneous dose rate of Fon, separated by a passive portion of the beam duty cycle of toff.
2：Sample Selection and Data Sources:
Single-crystal epilayers of (001) 3C-SiC were bombarded with 500 keV Ar+ ions.
3：List of Experimental Equipment and Materials:
The 4 MV ion accelerator (National Electrostatics Corporation, model 4UH) at Lawrence Livermore National Laboratory was used for irradiation. XRD analysis was done with a Bruker D8 Discover diffractometer. Raman scattering measurements were performed with the
4：5 nm line of an Ar laser. Experimental Procedures and Operational Workflow:
5 Samples were bombarded in the broad beam mode at 7° off the surface normal direction. The target temperature was kept at 100 ± 1°C during irradiation.
5：Data Analysis Methods:
XRD curves were numerically simulated with the RaDMaX program to obtain depth profiles of strain. Raman spectra were analyzed using the software package Peak-O-Mat.
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