研究目的
To analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs) and to investigate the effect of N-substituted 1,8-naphthalimide thin films on these diodes.
研究成果
The study demonstrated that N-substituted 1,8-naphthalimide thin films can effectively block unwanted states and traps in the conduction mechanism of Schottky barrier diodes, leading to improved electrical characteristics. The interface state density was found to be lower with the naphthalimide layer, indicating its potential for enhancing diode performance.
研究不足
The study is limited by the sensitivity of organic semiconductors to environmental conditions such as high temperature and humidity, which can affect their properties more adversely than their inorganic counterparts. Additionally, the mobility of charge carriers in organic semiconductors is generally low at room temperature, limiting their application in high-frequency devices.
1：Experimental Design and Method Selection:
The study involved the fabrication of Schottky barrier diodes with and without N-substituted 1,8-naphthalimide thin films. The films were deposited by spin coating and annealed under an air atmosphere. Al contacts were obtained via reactive magnetron sputtering.
2：Sample Selection and Data Sources:
A p-Si wafer with a (100) orientation was used as the substrate. The samples were chemically cleaned before fabrication.
3：List of Experimental Equipment and Materials:
Equipment included a spin coater for film deposition, a magnetron sputtering system for Al contact fabrication, and a KEITHLEY 487 Picoammeter/Voltage Source and HP 4192A LF impedance analyzer for electrical measurements.
4：Experimental Procedures and Operational Workflow:
The organic films were spin-coated onto the p-Si substrate, annealed, and then Al contacts were deposited. The I–V and C–V characteristics of the diodes were measured at room temperature.
5：Data Analysis Methods:
The ideality factor, barrier height, and series resistance were determined from the I–V characteristics. The interface state density distribution was extracted from forward-bias I–V measurements.
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