1：Experimental Design and Method Selection:

The study involved designing and fabricating mu-negative metamaterial (MNM) and epsilon-negative metamaterial (ENM) by loading chip capacitors or inductors onto a microstrip, creating heterostructures, and introducing an EIT-like metamaterial for quality factor enhancement. Theoretical models from periodic analysis were used to deduce effective permittivity and permeability.

2：Sample Selection and Data Sources:

Samples included microstrip-based structures with specific dimensions and loaded elements (e.g., MNM with chip capacitors, ENM with chip inductors), fabricated on a substrate with defined parameters.

3：List of Experimental Equipment and Materials:

Microstrip substrate (relative permittivity 2.65, thickness 1 mm), chip capacitors (1.5 pF), chip inductors (3.9 nH), soldering tin, through-holes, comb line, square split-ring resonator (SSRR).

4：65, thickness 1 mm), chip capacitors (5 pF), chip inductors (9 nH), soldering tin, through-holes, comb line, square split-ring resonator (SSRR). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Fabricate MNM by loading chip capacitors across periodic gaps in microstrip; fabricate ENM by loading chip inductors through punched holes; create heterostructures (e.g., MNM4ENM4); introduce EIT-like metamaterial at interface; measure S21 parameters using simulation and experimental setups.

5：Data Analysis Methods:

Analyze S21 parameters to observe stop bands, tunneling phenomena, and quality factors; use dispersion relations for effective parameter calculations; simulate electric energy density distributions.