研究目的
To investigate the effects of proton radiation on the optoelectronic properties of MoS2, including changes in photoluminescence and band structure, and to understand the response of devices fabricated from these materials in radiation environments.
研究成果
Proton radiation induces an indirect-to-direct band gap transition in multi-layer MoS2, which is preserved after annealing and accompanied by increased photoluminescence intensity in multi-layer samples. This is attributed to radiation-induced layer decoupling and higher radiative efficiency. The findings have implications for device processing and radiation hardness in optoelectronic applications.
研究不足
The study used a limited number of samples (only one sample per thickness and support type for full fluence levels), which may lead to part-to-part variations. Annealing effects at room temperature were not ruled out, and further studies with larger sample sizes and time-resolved measurements are needed for quantitative analysis.
1：Experimental Design and Method Selection:
The study used photoluminescence (PL) spectroscopy and scanning transmission electron microscopy (STEM) to characterize MoS2 flakes before and after proton radiation exposure and annealing. TRIM and SRIM simulations were employed to calculate vacancy densities and radiation doses.
2：Sample Selection and Data Sources:
MoS2 flakes were exfoliated and transferred to suspended and substrate-supported regions on SiN membranes. Samples included mono-, bi-, tri-, and 4-layer flakes.
3：List of Experimental Equipment and Materials:
Equipment included a Renishaw InVia micro-spectrometer for PL, an FEI TITAN-Themis STEM, the Aerospace Low Energy Accelerator Facility (LEAF) for proton irradiation, and polydimethylsiloxane (PDMS) for transfer. Materials included MoS2, SiN membranes, and argon for annealing.
4：Experimental Procedures and Operational Workflow:
Flakes were irradiated with 100 keV protons at fluences of 6x1013, 6x1014, and 6x1015 p/cm2. PL spectra were collected before and after irradiation and after annealing at 300°C for 1 hour. STEM imaging was performed on irradiated samples to observe defects.
5：PL spectra were collected before and after irradiation and after annealing at 300°C for 1 hour. STEM imaging was performed on irradiated samples to observe defects.
Data Analysis Methods:
5. Data Analysis Methods: PL spectra were analyzed for intensity and peak shifts. STEM images were used to identify atomic defects. TRIM and SRIM simulations provided estimates of vacancy densities and radiation effects.
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