研究目的
To develop a scalable, high-resolution, damage-reduced recipe for Cytop patterning in EWOD devices by characterizing and minimizing the damage from surface treatments and evaluating the effectiveness of annealing.
研究成果
The research successfully developed two feasible recipes for Cytop patterning with minimal damage: one using plasma treatment with a soft mask and annealing, and another using metal treatment with a hard mask and annealing. Annealing is crucial for restoring hydrophobicity and smoothing surfaces. These methods are scalable and high-resolution, suitable for EWOD device integration.
研究不足
The study is limited to specific treatment parameters and materials; scalability to industrial processes may require further optimization. The damage reduction is not complete, and some irreversible effects may persist. The use of specific equipment and materials might not be universally applicable.
1：Experimental Design and Method Selection:
The experiment was designed to evaluate two surface treatment methods (plasma and metal) for Cytop patterning, with variations in parameters such as plasma gas source, treatment time, metal type, and deposition process. Annealing was used to reduce damage. Five batches of samples were prepared to assess effectiveness and reversibility.
2：Sample Selection and Data Sources:
Silicon wafers and Cytop films were used as substrates and materials, respectively. Cytop solution CTL-809M and solvent CT-SOLV180 were purchased from Asahi Glass Co., Ltd. Silicon wafers (2-inch, single-sided polishing) were from Zhejiang Lijing Photoelectric Technology Co., Ltd., and glass slides were from Delta Technologies Co., Ltd. for verification.
3：List of Experimental Equipment and Materials:
Equipment includes plasma asher (AP-1000, Nordson MARCH), magnetron sputtering system (PVD 75, Kurt J. Lesker Company), e-beam evaporation system (Cooke Vacuum Products), ellipsometer (M-2000, J.A. Woollam), contact angle goniometer (OCA 20, Dataphysics Instruments), AFM (MultiMode, Veeco Instruments), hotplate for annealing, and various etchants. Materials include Cytop CTL-809M, silicon wafers, photoresist AZ5214E, metals (Al, Cu, Cr, Au), and cleaning solvents.
4：Experimental Procedures and Operational Workflow:
The procedure involved Cytop film preparation by spin-coating and curing, surface treatment (plasma or metal deposition), photolithography for mask fabrication, etching (dry for Cytop, wet for metals), resist removal, and annealing. Characterization was done using ellipsometry, contact angle measurements, and AFM.
5：Data Analysis Methods:
Data on film thickness, wettability (contact angle), and roughness were collected and analyzed. Thickness was fitted using the Cauchy model, contact angles were averaged from multiple drops, and roughness was averaged from multiple AFM scans.
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Magnetron Sputtering System
PVD 75
Kurt J. Lesker Company
Used for depositing metal films (Al, Cu, Cr, Au) on Cytop surfaces for hard mask fabrication.
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Ellipsometer
M-2000
J.A. Woollam
Used to measure film thickness of Cytop layers.
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Atomic Force Microscope
MultiMode
Veeco Instruments
Used to measure surface roughness of Cytop films.
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Plasma Asher
AP-1000
Nordson MARCH
Used for plasma treatment of Cytop surfaces to promote adhesion for photoresist coating.
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E-beam Evaporation System
Cooke Vacuum Products
Used as an alternative method for metal deposition on Cytop surfaces.
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Contact Angle Goniometer
OCA 20
Dataphysics Instruments
Used to measure wettability (contact angle) of Cytop surfaces.
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Cytop Solution
CTL-809M
Asahi Glass Co., Ltd.
Used as the hydrophobic material for coating in EWOD devices.
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Photoresist
AZ5214E
Used as a soft mask for photolithography in Cytop patterning.
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