研究目的
Investigating the optimization of thin n-in-p planar pixel modules for the ATLAS upgrade at the High Luminosity LHC (HL-LHC), focusing on their performance, radiation resistance, and suitability for high-pseudo-rapidity tracking.
研究成果
Thin planar n-in-p pixel modules with sensors in the 50-150 μm range show promising performance for the ATLAS upgrade at HL-LHC, with high interconnection yield and good radiation resistance. Active edge designs with floating guard rings extend efficiency to the physical edge, and higher bias voltages can recover performance after irradiation. Thinner sensors exhibit better hit efficiency at high incidence angles due to reduced charge sharing, making them suitable for high-pseudo-rapidity tracking. Future work should focus on higher fluence tests and integration with RD53 chips.
研究不足
The study is limited to specific sensor thicknesses (50-150 μm) and fluence levels (up to 10^15 neq/cm2). Performance at higher fluences (e.g., up to 10^16 neq/cm2 as expected for innermost layers) is not fully explored. The use of FE-I4 chips, which have larger pixels than the future RD53 chips, may not fully replicate conditions for the 50x50 μm2 pixels planned for HL-LHC. Optimization of thresholds and further measurements are needed for thinner sensors like the 50 μm type.
1：Experimental Design and Method Selection:
The study involves characterizing thin planar pixel sensors (50-150 μm thickness) interconnected to FE-I4 read-out chips using radioactive sources and beam tests. Active edge sensors with different designs (bias ring vs. floating guard ring) are compared. Beam tests are conducted at CERN-SPS and DESY using EUDET-type telescopes to measure hit efficiency before and after irradiation.
2：Sample Selection and Data Sources:
Sensors are produced using different technologies (e.g., CiS and ADVACAM productions) with varying thicknesses and edge designs. Irradiation is performed at facilities like the MC40 Proton Cyclotron in Birmingham up to a fluence of 10^15 neq/cm2.
3：List of Experimental Equipment and Materials:
Includes FE-I4 read-out chips, radioactive sources (e.g., Cadmium), beam test setups at CERN-SPS and DESY, EUDET telescopes, irradiation facilities, and sensors from CiS and ADVACAM.
4：Experimental Procedures and Operational Workflow:
Sensors are flip-chipped to FE-I4 chips, characterized with IV curves and source scans. Beam tests involve inclining sensors to high angles (e.g., 76-78°) to simulate high pseudo-rapidity conditions. Data on hit efficiency and cluster properties are collected and analyzed.
5：Data Analysis Methods:
Hit efficiency is measured and compared across different sensor thicknesses and edge designs. Statistical analysis of cluster sizes and efficiency maps is performed, with thresholds tuned (e.g., 800 e? or 1000 e?).
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