研究目的
To characterize the radiation tolerance and performance of HV-CMOS pixel sensors after irradiation for use in high-radiation environments like the HL-LHC upgrades.
研究成果
The irradiated HV-CMOS sensors demonstrated high hit efficiencies (up to 99.7%) and good radiation tolerance, making them suitable for HL-LHC upgrades. Future improvements could involve higher resistivity substrates and monolithic designs.
研究不足
The study is limited to specific irradiation fluences and sensor designs; higher fluences may require further optimization. The cooling setup and beam conditions may not fully replicate the HL-LHC environment. Circuit-level deteriorations at high fluences need more detailed studies.
1:Experimental Design and Method Selection:
The study involved testbeam characterizations of irradiated CCPDv4 sensors using the FE-I4 beam telescope at the CERN SPS H8 beamline. The methodology included measuring hit efficiencies, time resolution, and cluster sizes under various irradiation fluences and bias conditions.
2:Sample Selection and Data Sources:
CCPDv4 sensors produced with the ams H18 HV-CMOS process were irradiated with reactor neutrons and 18 MeV protons to fluences between 1e14 and 5e15 neq/cm^
3:Samples were glued to ATLAS FE-I4 readout chips. List of Experimental Equipment and Materials:
Equipment included the FE-I4 beam telescope, a cooling box with a Huber Unistat chiller, Araldite 2011 epoxy glue, and a SET Accμra 100 flip-chip bonder. Materials included the irradiated sensors and readout chips.
4:Experimental Procedures and Operational Workflow:
Sensors were cooled to -25°C to reduce leakage current. Beam tests were conducted with high-energy pions, and data on hit efficiency, timing, and cluster sizes were collected using the telescope and readout systems.
5:Data Analysis Methods:
Data analysis involved calculating hit efficiencies from track matches, analyzing timing distributions with a clock-phase veto, and determining cluster size fractions using statistical methods.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容