研究目的
The objective of the paper is the identification of some parameters of a magnetron sputtering chamber that are essential for its actual operation in DC mode and which offer a basis for the design of a pulsed DC converter.
研究成果
The paper concludes that pulsed mode magnetron sputtering requires power supplies capable of repeated and fast plasma ignition, fast current control, and arc handling. The proposed current-controlled power supply, based on a boost converter topology with hysteresis control, was successfully implemented and tested, demonstrating suitability for plasma ignition and current control in magnetron sputtering applications. Arc handling can be addressed with the current design, and the study provides a basis for further development in pulsed DC converter design.
研究不足
The study is limited by the low current limit of the available voltage source (Fluke 410B, 10 mA), which restricted the range of operating points that could be measured. Additionally, the experiments were conducted on a specific vacuum chamber setup, and results may not be fully generalizable. Future work includes developing an arc detecting circuit and investigating pulse parameter influences on the technological process.
1：Experimental Design and Method Selection:
The study involved experiments to identify current-voltage characteristics of a vacuum chamber under different gases and pressures, using voltage and current impulse trains. A power electronic converter topology with a hysteresis current controller was proposed and tested for plasma ignition and current control.
2：Sample Selection and Data Sources:
The vacuum chamber was used with supplies of different gases (e.g., argon, nitrogen) and gas mixtures at various pressures (e.g., 0.26-0.39 Pa, 0.66 Pa, 1.04 Pa). Data were acquired through manual sweeping and impulse applications.
3：26-39 Pa, 66 Pa, 04 Pa). Data were acquired through manual sweeping and impulse applications. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a variable resistor, variable voltage supply (Fluke 410B), IGBT transistor, coaxial shunt (
4：25 Ω), voltage source (1 kV), buffer capacitor, boost converter, Micro-Controller Unit (MCU), Programmable Gain Amplifier (PGA), Digital to Analog Converter (DAC), Xilinx Complex Programmable Logic Device (CPLD), optical fiber links, Tektronix TDS 210 oscilloscope, high voltage probe (15 kV,
1000), and the magnetron sputtering chamber itself.
5：Experimental Procedures and Operational Workflow:
Procedures included modifying load line parameters with a variable resistor and voltage supply, applying voltage and current impulses to the chamber, measuring responses with oscilloscopes and shunts, implementing a control structure with hysteresis current control, and testing the converter on the vacuum chamber.
6：Data Analysis Methods:
Data were analyzed through simulation (Matlab Simulink), practical measurements of voltage and current waveforms, and comparison with references to model delays and characteristics.
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Fluke 410B
410B
Fluke
Used as a decadic voltage source to supply voltage and modify load line parameters for identifying V-I characteristics of the discharge.
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Tektronix TDS 210 oscilloscope
TDS 210
Tektronix
Used for measuring voltage and current waveforms during experiments.
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coaxial shunt
0.25 Ω
Used for current measurements with a transformation ratio of 4 A to 1 V in various experiments.
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high voltage probe
15 kV 1:1000
Used for high voltage measurements in conjunction with the oscilloscope.
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Micro-Controller Unit
MCU
Drives the Programmable Gain Amplifier and Digital to Analog Converter in the control structure.
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Programmable Gain Amplifier
PGA
Amplifies the voltage from the coaxial shunt for current control.
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Digital to Analog Converter
DAC
Provides reference voltage for the comparator in the control loop.
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Xilinx Complex Programmable Logic Device
CPLD
Xilinx
Implements the pulse width limiter block in VHDL for controlling transistor driving.
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optical fiber links
Control the driving units of transistors in the converter.
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IGBT transistor
Used in circuits for switching and controlling voltage/current impulses.
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