研究目的
To study electron transport in nanoscale MOSFET channels by dividing electrons into 2D and 3D populations to reduce computational cost, with a focus on rigorously treating scattering mechanisms between these populations.
研究成果
The improved model provides a computationally feasible approach for 2D-3D electron gas coupling in MOSFETs, ensuring charge conservation and including all main scattering mechanisms. It addresses limitations of previous models and is suitable for domain decomposition strategies in device simulation.
研究不足
The model requires numerical solutions and approximations, such as the use of MEP for closure and handling of scattering integrals. Computational cost is high, especially for evaluating matrix elements in scattering rates. The determination of parameters like tQ (quantum region thickness) may need preliminary simulations.
1：Experimental Design and Method Selection:
The study uses a domain decomposition strategy, treating part of the device quantum mechanically and part semiclassically. It employs the Maximum Entropy Principle (MEP) for closure relations in hydrodynamical models derived from Boltzmann equations for 2D and 3D electron gases.
2：Sample Selection and Data Sources:
The model is applied to a MOSFET with a channel length of some tens of nanometers, using silicon as the semiconductor material.
3：List of Experimental Equipment and Materials:
No specific experimental equipment is mentioned; the paper is theoretical and computational.
4：Experimental Procedures and Operational Workflow:
The methodology involves solving Schr?dinger-Poisson systems for subbands, Boltzmann equations for electron transport, and moment equations closed via MEP. Numerical simulations are implied but not detailed.
5：Data Analysis Methods:
Analysis includes evaluating scattering rates, production terms, and solving equations numerically, with parameters from tables in the paper.
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