研究目的
Investigating the temperature dependence of the quantum optical transition properties in quasi two-dimensional Landau splitting systems of GaN and ZnS using quantum transport theory.
研究成果
The EAPS theory facilitates the analysis of temperature dependence of QTLW and QTLS, revealing increasing trends with temperature for GaN and ZnS, with ZnS having lower QTLW than GaN below 350 K. The results provide insights into scattering mechanisms in electron-piezoelectric potential interacting systems and support future experimental analyses.
研究不足
The study is theoretical and relies on approximations such as the moderately weak coupling (MWC) scheme; it does not involve experimental validation, and the analysis is limited to specific materials (GaN and ZnS) and conditions.
1：Experimental Design and Method Selection:
The study employs a theoretical approach using Quantum Transport Theory (QTR) with the projected Liouville equation method and Equilibrium Average Projection Scheme (EAPS) to analyze electron confinement in a square well potential system under a static magnetic field and oscillatory electric field.
2：Sample Selection and Data Sources:
The materials analyzed are GaN and ZnS, with material constants sourced from references [17-19].
3：9]. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: No specific experimental equipment is used as this is a theoretical study; materials include GaN and ZnS semiconductors.
4：Experimental Procedures and Operational Workflow:
The methodology involves deriving formulas for absorption power (QTLS) and scattering factor (QTLW) based on Hamiltonian equations and numerical calculations of temperature and magnetic field dependencies.
5：Data Analysis Methods:
Numerical calculations are performed to plot QTLW and QTLS against temperature and magnetic field, using derived theoretical expressions.
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